German engineers and physicists have made a prototype of an advanced RAM system that nears the theoretical speed limit for the process. According to a NewScientistTech report, this technology – known as Magnetoresistive Random Access Memory (MRAM) – is claimed to be faster and more efficient then RAM currentlyavailable. Some companies speculate the capabilities and low power consumption of MRAM may push the mobile market in the years to come. So far, however, the technology is in experimental stages at the moment, and is not available for distribution.
Standard RAM stores the binary 1 or 0 as the level of charge in a capacitor. MRAM stores the 1 or 0 as the polarity direction (North-South) in small magnets. Each magnet that can be flipped is situated next to a fixed magnet, the data is recovered by passing an electric current through the pair to read the direction of the field.