Fujitsu announces breakthrough advancement in ReRAM

Fujitsu Laboratories announced a breakthrough in resistive RAM, or ReRAM. ReRAM is a non-volatile memory with low power consumption. Fujitsu has worked through some technology barriers to create a ReRAM solution which is less impacted by design limitations, while decreasing erase cycle power to 100 microamps or less at 5 nanoseconds. ReRAM is form of […]

Fujitsu Laboratories announced a breakthrough in resistive RAM, or ReRAM. ReRAM is a non-volatile memory with low power consumption. Fujitsu has worked through some technology barriers to create a ReRAM solution which is less impacted by design limitations, while decreasing erase cycle power to 100 microamps or less at 5 nanoseconds.

ReRAM is form of memory dependent upon a material which, when a voltage is applied, changes resistance. According to Fujitsu, ReRAM can be created with very small feature sizes, allowing to scale to future process generations. It is also employs a low-cost manufacturing solution, making it a potentially adoptable technology by several manufacturers.

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