Samsung stacks DRAM to reach higher capacities

Stacking is the magic word that promises more capable and sometimes also faster multi-chip packages than what can be achieved today. Samsung claims to have developed a first "through silicon via" (TSV) DRAM stack that soon could deliver 4 GB memory modules for the mainstream market. The company's wafer-level-processed stacked package (WSP) consists of four […]

Stacking is the magic word that promises more capable and sometimes also faster multi-chip packages than what can be achieved today. Samsung claims to have developed a first "through silicon via" (TSV) DRAM stack that soon could deliver 4 GB memory modules for the mainstream market.

The company’s wafer-level-processed stacked package (WSP) consists of four of four 512 Mb DDR2 chips, which results in one 2 Gb DRAM device. Built onto a DDR2 memory module, Samsung said that it “can